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IPT026N10N5ATMA1

In Stock: 4,949
IPT026N10N5ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT026N10N5ATMA1 Infineon Technologies
IPT026N10N5ATMA1

Infineon Technologies

MOSFET N-CH 100V 27A/202A 8HSOF

IPT026N10N5ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 27A/202A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 4,949

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8800 pF @ 50 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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