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IPT013N08NM5LFATMA1

In Stock: 5,142
IPT013N08NM5LFATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPT013N08NM5LFATMA1 Infineon Technologies
IPT013N08NM5LFATMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

IPT013N08NM5LFATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH 40<-<100V PG-HSOF-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 5,142

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C333A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 150A, 10V
Vgs(th) (Max) @ Id4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs158 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 40 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8
Package / Case8-PowerSFN

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