Name: IPT008N06NM5LFATMA1
Brand: Infineon Technologies
SKU: IPT008N06NM5LFATMA1
Price: 7.50 USD
Availability: InStock

REF: IPT008N06NM5LFATMA1 Infineon Technologies

IPT008N06NM5LFATMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

IPT008N06NM5LFATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH 40<-<100V PG-HSOF-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 2,502

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	454A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	0.8mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	185 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8
Package / Case	8-PowerSFN