Name: IPSH4N03LA G
Brand: Infineon Technologies
SKU: IPSH4N03LA G
Availability: InStock

REF: IPSH4N03LA G Infineon Technologies

IPSH4N03LA G

MOSFET N-CH 25V 90A TO251-3

IPSH4N03LA G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 25V 90A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 4,108

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package / Case	TO-251-3 Stub Leads, IPak