Name: IPSA70R1K4CEAKMA1
Brand: Infineon Technologies
SKU: IPSA70R1K4CEAKMA1
Price: 0.94 USD
Availability: InStock

REF: IPSA70R1K4CEAKMA1 Infineon Technologies

IPSA70R1K4CEAKMA1

Infineon Technologies

MOSFET N-CH 700V 5.4A TO251-3

IPSA70R1K4CEAKMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 700V 5.4A TO251-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

Datasheet Request a Quote

In Stock: 7,901

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA