Name: IPS65R1K0CEAKMA2
Brand: Infineon Technologies
SKU: IPS65R1K0CEAKMA2
Price: 0.50 USD
Availability: InStock

REF: IPS65R1K0CEAKMA2 Infineon Technologies

IPS65R1K0CEAKMA2

Infineon Technologies

MOSFET N-CH 650V 7.2A TO251-3

IPS65R1K0CEAKMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 7.2A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 1,701

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	15.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	328 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-342
Package / Case	TO-251-3 Stub Leads, IPak