Name: IPS60R1K0PFD7SAKMA1
Brand: Infineon Technologies
SKU: IPS60R1K0PFD7SAKMA1
Price: 1.02 USD
Availability: InStock

REF: IPS60R1K0PFD7SAKMA1 Infineon Technologies

IPS60R1K0PFD7SAKMA1

Infineon Technologies

MOSFET N-CH 650V 4.7A TO251-3

IPS60R1K0PFD7SAKMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 4.7A TO251-3. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 968

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	26W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA