Name: IPS110N12N3GBKMA1
Brand: Infineon Technologies
SKU: IPS110N12N3GBKMA1
Availability: InStock

REF: IPS110N12N3GBKMA1 Infineon Technologies

IPS110N12N3GBKMA1

MOSFET N-CH 120V 75A TO251-3

IPS110N12N3GBKMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 120V 75A TO251-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Stub Leads, IPak.

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In Stock: 7,129

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4310 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3-11
Package / Case	TO-251-3 Stub Leads, IPak