Name: IPP90R1K0C3XKSA1
Brand: Infineon Technologies
SKU: IPP90R1K0C3XKSA1
Availability: InStock

REF: IPP90R1K0C3XKSA1 Infineon Technologies

IPP90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO220-3

IPP90R1K0C3XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 900V 5.7A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 3,294

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3