Name: IPP65R065C7
Brand: Infineon Technologies
SKU: IPP65R065C7
Availability: InStock

REF: IPP65R065C7 Infineon Technologies

IPP65R065C7

POWER FIELD-EFFECT TRANSISTOR, 3

IPP65R065C7 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. POWER FIELD-EFFECT TRANSISTOR, 3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 9,624

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id	4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	171W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3