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IPP60R120C7XKSA1

In Stock: 9,091
IPP60R120C7XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP60R120C7XKSA1 Infineon Technologies
IPP60R120C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 19A TO220-3

IPP60R120C7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 19A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 9,091

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 400 V
FET Feature-
Power Dissipation (Max)92W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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