Name: IPP60R040S7XKSA1
Brand: Infineon Technologies
SKU: IPP60R040S7XKSA1
Price: 10.73 USD
Availability: InStock

REF: IPP60R040S7XKSA1 Infineon Technologies

IPP60R040S7XKSA1

Infineon Technologies

HIGH POWER_NEW PG-TO220-3

IPP60R040S7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HIGH POWER_NEW PG-TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

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In Stock: 6,970

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	40mOhm @ 13A, 12V
Vgs(th) (Max) @ Id	4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 12 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3127 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	245W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3