IPP60R022S7XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP60R022S7XKSA1 Infineon Technologies
IPP60R022S7XKSA1

Infineon Technologies

MOSFET N-CH 600V 23A TO220-3

IPP60R022S7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 23A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 1,000

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs22mOhm @ 23A, 12V
Vgs(th) (Max) @ Id4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 12 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5639 pF @ 300 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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