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IPP530N15N3GXKSA1

In Stock: 8,376
IPP530N15N3GXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP530N15N3GXKSA1 Infineon Technologies
IPP530N15N3GXKSA1

Infineon Technologies

MOSFET N-CH 150V 21A TO220-3

IPP530N15N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 150V 21A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 8,376

Specifications

17 parameters
Product StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds887 pF @ 75 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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