Name: IPP50CN10NGHKSA1
Brand: Infineon Technologies
SKU: IPP50CN10NGHKSA1
Availability: InStock

REF: IPP50CN10NGHKSA1 Infineon Technologies

IPP50CN10NGHKSA1

N-CHANNEL POWER MOSFET

IPP50CN10NGHKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

Datasheet Request a Quote

In Stock: 2,149

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3