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IPP110N20NAAKSA1

In Stock: 9,158
IPP110N20NAAKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP110N20NAAKSA1 Infineon Technologies
IPP110N20NAAKSA1

Infineon Technologies

MOSFET N-CH 200V 88A TO220-3

IPP110N20NAAKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 88A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 9,158

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7100 pF @ 100 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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