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IPP086N10N3G

In Stock: 7,936
IPP086N10N3G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP086N10N3G Infineon Technologies
IPP086N10N3G

Infineon Technologies

POWER FIELD-EFFECT TRANSISTOR, 8

IPP086N10N3G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. POWER FIELD-EFFECT TRANSISTOR, 8.

Datasheet Request a Quote

In Stock: 7,936

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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