IPP070N06N G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP070N06N G Infineon Technologies
IPP070N06N G

Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

IPP070N06N G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 80A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 2,919

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 30 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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