Name: IPP06CNE8N G
Brand: Infineon Technologies
SKU: IPP06CNE8N G
Availability: InStock

REF: IPP06CNE8N G Infineon Technologies

IPP06CNE8N G

MOSFET N-CH 85V 100A TO220-3

IPP06CNE8N G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 85V 100A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 7,635

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	138 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9240 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3