IPP065N04N G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP065N04N G Infineon Technologies
IPP065N04N G

Infineon Technologies

MOSFET N-CH 40V 50A TO220-3

IPP065N04N G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 40V 50A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 3,555

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 20 V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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