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IPP062NE7N3GXKSA1

In Stock: 7,608
IPP062NE7N3GXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP062NE7N3GXKSA1 Infineon Technologies
IPP062NE7N3GXKSA1

Infineon Technologies

MOSFET N-CH 75V 80A TO220-3

IPP062NE7N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 75V 80A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

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In Stock: 7,608

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.8V @ 70µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3840 pF @ 37.5 V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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