IPP023NE7N3GXKSA1

In Stock: 1,415
IPP023NE7N3GXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPP023NE7N3GXKSA1 Infineon Technologies
IPP023NE7N3GXKSA1

Infineon Technologies

MOSFET N-CH 75V 120A TO220-3

IPP023NE7N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 75V 120A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 1,415

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14400 pF @ 37.5 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

Need a Quote for IPP023NE7N3GXKSA1?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →