Name: IPN65R1K5CEATMA1
Brand: Infineon Technologies
SKU: IPN65R1K5CEATMA1
Price: 0.40 USD
Availability: InStock

REF: IPN65R1K5CEATMA1 Infineon Technologies

IPN65R1K5CEATMA1

Infineon Technologies

MOSFET N-CH 650V 5.2A SOT223

IPN65R1K5CEATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 5.2A SOT223. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 6,187

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-4, TO-261AA