Name: IPN60R3K4CEATMA1
Brand: Infineon Technologies
SKU: IPN60R3K4CEATMA1
Price: 0.64 USD
Availability: InStock

REF: IPN60R3K4CEATMA1 Infineon Technologies

IPN60R3K4CEATMA1

Infineon Technologies

MOSFET N-CH 600V 2.6A SOT223

IPN60R3K4CEATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 2.6A SOT223. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 9,688

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	93 pF @ 100 V
FET Feature	Super Junction
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-3
Package / Case	TO-261-4, TO-261AA