Name: IPN60R2K0PFD7SATMA1
Brand: Infineon Technologies
SKU: IPN60R2K0PFD7SATMA1
Price: 0.85 USD
Availability: InStock

REF: IPN60R2K0PFD7SATMA1 Infineon Technologies

IPN60R2K0PFD7SATMA1

Infineon Technologies

MOSFET N-CH 650V 3A SOT223

IPN60R2K0PFD7SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 3A SOT223. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-261-3.

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In Stock: 2,110

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	3.8 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	134 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	6W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-3-1
Package / Case	TO-261-3