Name: IPN50R3K0CEATMA1
Brand: Infineon Technologies
SKU: IPN50R3K0CEATMA1
Price: 0.57 USD
Availability: InStock

REF: IPN50R3K0CEATMA1 Infineon Technologies

IPN50R3K0CEATMA1

Infineon Technologies

MOSFET N-CH 500V 2.6A SOT223

IPN50R3K0CEATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 2.6A SOT223. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 892

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	84 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-3
Package / Case	TO-261-4, TO-261AA