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IPL65R650C6SATMA1

In Stock: 5,463
IPL65R650C6SATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPL65R650C6SATMA1 Infineon Technologies
IPL65R650C6SATMA1

Infineon Technologies

MOSFET N-CH 650V 6.7A THIN-PAK

IPL65R650C6SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 6.7A THIN-PAK. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 5,463

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
FET Feature-
Power Dissipation (Max)56.8W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-2
Package / Case8-PowerTDFN

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