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IPL65R1K0C6SATMA1

In Stock: 2,576
IPL65R1K0C6SATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPL65R1K0C6SATMA1 Infineon Technologies
IPL65R1K0C6SATMA1

Infineon Technologies

MOSFET N-CH 650V 4.2A THIN-PAK

IPL65R1K0C6SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 4.2A THIN-PAK. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 2,576

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
FET Feature-
Power Dissipation (Max)34.7W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-2
Package / Case8-PowerTDFN

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