Name: IPL65R165CFDAUMA1
Brand: Infineon Technologies
SKU: IPL65R165CFDAUMA1
Price: 3.57 USD
Availability: InStock

REF: IPL65R165CFDAUMA1 Infineon Technologies

IPL65R165CFDAUMA1

Infineon Technologies

MOSFET N-CH 650V 21.3A 4VSON

IPL65R165CFDAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 21.3A 4VSON. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 4-PowerTSFN.

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In Stock: 2,079

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	195W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-VSON-4
Package / Case	4-PowerTSFN