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IPL60R2K1C6SATMA1

In Stock: 176,342
IPL60R2K1C6SATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPL60R2K1C6SATMA1 Infineon Technologies
IPL60R2K1C6SATMA1

Infineon Technologies

MOSFET N-CH 600V 2.3A THIN-PAK

IPL60R2K1C6SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 2.3A THIN-PAK. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 176,342

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 100 V
FET Feature-
Power Dissipation (Max)21.6W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSON-8-2
Package / Case8-PowerTDFN

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