Name: IPL60R1K5C6SATMA1
Brand: Infineon Technologies
SKU: IPL60R1K5C6SATMA1
Price: 0.75 USD
Availability: InStock

REF: IPL60R1K5C6SATMA1 Infineon Technologies

IPL60R1K5C6SATMA1

Infineon Technologies

MOSFET N-CH 600V 3A THIN-PAK

IPL60R1K5C6SATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 3A THIN-PAK. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 8-PowerTDFN.

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In Stock: 1,269

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	26.6W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-ThinPak (5x6)
Package / Case	8-PowerTDFN