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IPL60R199CPAUMA1

In Stock: 2,800
IPL60R199CPAUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPL60R199CPAUMA1 Infineon Technologies
IPL60R199CPAUMA1

Infineon Technologies

MOSFET N-CH 650V 16.4A 4VSON

IPL60R199CPAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 16.4A 4VSON. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 4-PowerTSFN.

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In Stock: 2,800

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1520 pF @ 100 V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-VSON-4
Package / Case4-PowerTSFN

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