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IPL60R065C7AUMA1

In Stock: 7,523
IPL60R065C7AUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPL60R065C7AUMA1 Infineon Technologies
IPL60R065C7AUMA1

Infineon Technologies

MOSFET HIGH POWER_NEW

IPL60R065C7AUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET HIGH POWER_NEW. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case 4-PowerTSFN.

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In Stock: 7,523

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 400 V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-VSON-4-1
Package / Case4-PowerTSFN

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