IPI80N06S4L05AKSA1

In Stock: 13,500
IPI80N06S4L05AKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPI80N06S4L05AKSA1 Infineon Technologies
IPI80N06S4L05AKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

IPI80N06S4L05AKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 80A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 13,500

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds8180 pF @ 25 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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