Name: IPI80N03S4L04AKSA1
Brand: Infineon Technologies
SKU: IPI80N03S4L04AKSA1
Availability: InStock

REF: IPI80N03S4L04AKSA1 Infineon Technologies

IPI80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO262-3

IPI80N03S4L04AKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 80A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

Datasheet Request a Quote

In Stock: 7,851

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	5100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA