IPI60R385CP - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPI60R385CP Infineon Technologies
IPI60R385CP

Infineon Technologies

N-CHANNEL POWER MOSFET

IPI60R385CP is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 78,346

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 100 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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