Name: IPI35CN10N G
Brand: Infineon Technologies
SKU: IPI35CN10N G
Availability: InStock

REF: IPI35CN10N G Infineon Technologies

IPI35CN10N G

MOSFET N-CH 100V 27A TO262-3

IPI35CN10N G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 27A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 7,347

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	35mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1570 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	58W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA