Name: IPI200N25N3GAKSA1
Brand: Infineon Technologies
SKU: IPI200N25N3GAKSA1
Price: 6.87 USD
Availability: InStock

REF: IPI200N25N3GAKSA1 Infineon Technologies

IPI200N25N3GAKSA1

Infineon Technologies

MOSFET N-CH 250V 64A TO262-3

IPI200N25N3GAKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 250V 64A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

Datasheet Request a Quote

In Stock: 8,393

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA