IPI147N12N3G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPI147N12N3G Infineon Technologies
IPI147N12N3G

Infineon Technologies

IPI147N12 - 12V-300V N-CHANNEL P

IPI147N12N3G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. IPI147N12 - 12V-300V N-CHANNEL P. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 14,889

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3220 pF @ 60 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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