IPI076N15N5AKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPI076N15N5AKSA1 Infineon Technologies
IPI076N15N5AKSA1

Infineon Technologies

MV POWER MOS

IPI076N15N5AKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MV POWER MOS. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 6,866

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs7.6mOhm @ 56A, 10V
Vgs(th) (Max) @ Id4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4700 pF @ 75 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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