Name: IPI076N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI076N12N3GAKSA1
Price: 2.45 USD
Availability: InStock

REF: IPI076N12N3GAKSA1 Infineon Technologies

IPI076N12N3GAKSA1

Infineon Technologies

MOSFET N-CH 120V 100A TO262-3

IPI076N12N3GAKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 120V 100A TO262-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

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In Stock: 9,451

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	101 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6640 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA