IPI034NE7N3G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPI034NE7N3G Infineon Technologies
IPI034NE7N3G

Infineon Technologies

N-CHANNEL POWER MOSFET

IPI034NE7N3G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA.

In Stock: 7,234

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds8130 pF @ 37.5 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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