Name: IPDQ60R065S7XTMA1
Brand: Infineon Technologies
SKU: IPDQ60R065S7XTMA1
Price: 10.86 USD
Availability: InStock

REF: IPDQ60R065S7XTMA1 Infineon Technologies

IPDQ60R065S7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

IPDQ60R065S7XTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. HIGH POWER_NEW PG-HDSOP-22. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 22-PowerBSOP Module.

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In Stock: 4,711

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	65mOhm @ 8A, 12V
Vgs(th) (Max) @ Id	4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 12 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1932 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	195W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-22-1
Package / Case	22-PowerBSOP Module