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IPDD60R125G7XTMA1

In Stock: 3,550
IPDD60R125G7XTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPDD60R125G7XTMA1 Infineon Technologies
IPDD60R125G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 20A HDSOP-10

IPDD60R125G7XTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 20A HDSOP-10. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 10-PowerSOP Module.

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In Stock: 3,550

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 400 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-10-1
Package / Case10-PowerSOP Module

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