Name: IPD80R450P7ATMA1
Brand: Infineon Technologies
SKU: IPD80R450P7ATMA1
Price: 2.77 USD
Availability: InStock

REF: IPD80R450P7ATMA1 Infineon Technologies

IPD80R450P7ATMA1

Infineon Technologies

MOSFET N-CH 800V 11A TO252

IPD80R450P7ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 800V 11A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Datasheet Request a Quote

In Stock: 2,481

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 500 V
FET Feature	Super Junction
Power Dissipation (Max)	73W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63