Name: IPD80N06S3-09
Brand: Infineon Technologies
SKU: IPD80N06S3-09
Availability: InStock

REF: IPD80N06S3-09 Infineon Technologies

IPD80N06S3-09

MOSFET N-CH 55V 80A TO252-3

IPD80N06S3-09 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 55V 80A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,169

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 55µA
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63