Name: IPD60R750E6ATMA1
Brand: Infineon Technologies
SKU: IPD60R750E6ATMA1
Availability: InStock

REF: IPD60R750E6ATMA1 Infineon Technologies

IPD60R750E6ATMA1

IPD60R750 - 600V COOLMOS N-CHANN

IPD60R750E6ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. IPD60R750 - 600V COOLMOS N-CHANN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,173

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs	17.2 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	373 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63