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IPD60R600E6ATMA1

In Stock: 3,965
IPD60R600E6ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPD60R600E6ATMA1 Infineon Technologies
IPD60R600E6ATMA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

IPD60R600E6ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 7.3A TO252. Key specifications: mounting type Surface Mount, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,965

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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