Name: IPD60N10S4L12ATMA1
Brand: Infineon Technologies
SKU: IPD60N10S4L12ATMA1
Price: 2.14 USD
Availability: InStock

REF: IPD60N10S4L12ATMA1 Infineon Technologies

IPD60N10S4L12ATMA1

Infineon Technologies

MOSFET N-CH 100V 60A TO252-3

IPD60N10S4L12ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 60A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 1,748

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3170 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63