Name: IPD50R800CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R800CEBTMA1
Availability: InStock

REF: IPD50R800CEBTMA1 Infineon Technologies

IPD50R800CEBTMA1

MOSFET N CH 500V 5A TO252

IPD50R800CEBTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N CH 500V 5A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 9,900

Specifications

17 parameters

Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	12.4 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
FET Feature	Super Junction
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63